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- W2004711843 abstract "Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550 °C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1 μA/cm2. The emission current density from the ZnO nanowires reached 1 mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future." @default.
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- W2004711843 date "2002-11-04" @default.
- W2004711843 modified "2023-09-27" @default.
- W2004711843 title "Field emission from well-aligned zinc oxide nanowires grown at low temperature" @default.
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- W2004711843 doi "https://doi.org/10.1063/1.1518810" @default.
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