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- W2004735243 abstract "Spontaneous stacking fault formation during annealing in n(+) 4H-SiC epilayers deposited on the n(-) 4H-SiC substrates has been analyzed by conventional and high-resolution transmission electron mi ..." @default.
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- W2004735243 date "2003-09-01" @default.
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- W2004735243 title "Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing" @default.
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