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- W2004804876 abstract "Thin surface layers of GaAs have been heavily doped by laser-assisted diffusion from the gas phase using H2Se and Diethylzinc (DEZ) in H2. The dependence of sheet carrier concentration and contact resistance of evaporated metal contacts on laser pulse energy, duration and substrate temperature is given. Specific contact resistances of 3·10−5 ω cm2 and 5·10−5 ω cm2 for nonalloyed n- and p-contacts, respectively, are obtained. After alloying they improve to values of 3·10−6 ω cm2. This process can be used to produce local ohmic contacts at low temperature." @default.
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- W2004804876 title "Ohmic contacts on n- and p-layers of GaAs using laser-induced diffusion" @default.
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- W2004804876 doi "https://doi.org/10.1016/0038-1101(85)90131-5" @default.
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