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- W2004809972 abstract "A Ge light-emitting diode (LED) is demonstrated using a metal–insulator–semiconductor (MIS) tunneling structure with Ge nanocrystals (NCs) embedded within the insulator. A high- k dielectric insulator was used and the Ge NCs were grown by co-sputtering onto p-type Si substrates. Electron-hole radiative recombination within the Ge NCs (grown within HfAlO) allowed for the observation of infrared emission. Visible light was also detected due to defect-related radiative recombination at the Ge/HfAlO interface. The NC size and Ge content were measured using transmission electron microscopy (TEM), energy dispersive X-ray (EDX) spectroscopy and Raman spectroscopy. The peak wavelength from the photoluminescence experiments was lower when HfAlO was used as the dielectric than when HfO 2 was used. This is likely due to the larger band gap of HfAlO, when compared to HfO 2 ." @default.
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- W2004809972 date "2009-07-01" @default.
- W2004809972 modified "2023-09-26" @default.
- W2004809972 title "Light emission from high-k dielectrics containing Ge nanocrystals" @default.
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- W2004809972 doi "https://doi.org/10.1016/j.tsf.2009.03.158" @default.
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