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- W2004852531 abstract "Reverse recovery transient behavior of bipolar transistors is studied and a method of simulating such response is developed, which provides a new tool for determining the emitter parameters such as the emitter minority-carrier lifetime and the emitter surface recombination velocity. Bandgap narrowing, Fermi statistics and field-dependent minority-carrier mobility for accounting heavy doping effects in the emitter region are included in the treatment. Good agreement is obtained when emitter minority-carrier lifetimes for three different diodes calculated from the present method are compared with that obtained from other methods." @default.
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- W2004852531 date "1988-11-01" @default.
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- W2004852531 title "Characterization of reverse recovery transient behavior of bipolar transistors for emitter parameters determination" @default.
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- W2004852531 doi "https://doi.org/10.1016/0038-1101(88)90006-8" @default.
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