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• W2004857487 abstract "A method is developed to analyze the transient response of semiconductor devices in phase space. This is achieved by solving the space and time dependent electron Boltzmann transport equation self-consistently with the Poisson and transient hole-current-continuity equation. The result gives the details of the time evolution of the distribution function. The method is applied to analyze a bipolar junction transistor. The model predicts the limits in which the steady-state response approximation can be applied. The model exposes a transient overshoot in the high energy tail of the distribution function." @default.
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• W2004857487 date "1999-07-01" @default.
• W2004857487 modified "2023-09-24" @default.
• W2004857487 title "A transient solution of the Boltzmann equation exposes energy overshoot in semiconductor devices" @default.
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• W2004857487 doi "https://doi.org/10.1063/1.370754" @default.
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