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• W2004860596 abstract "The theoretical performance of medium wavelength infrared (MWIR) InAsSb-based ternary alloy photodiodes is examined theoretically taking into account thermal generation governed by the Auger and radiative mechanisms. The contribution of spin-off band on carrier lifetime in p-type InAsSb ternary is re-examined due to new insight into composition dependence of spin-orbit-splitting band gap energy. The investigations are carried out for photodiodes operated at room temperature. The effects of doping profiles on the photodiode parameters (R₀A product and detectivity) are considered. The theoretical predictions of photodiode parameters are compared with experimental data published in the literature." @default.
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• W2004860596 date "2010-04-23" @default.
• W2004860596 modified "2023-09-23" @default.
• W2004860596 title "Performance limits of room-temperature InAsSb photodiodes" @default.
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• W2004860596 doi "https://doi.org/10.1117/12.855196" @default.
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