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- W2004865253 abstract "Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p‐n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device." @default.
- W2004865253 created "2016-06-24" @default.
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- W2004865253 date "2011-01-01" @default.
- W2004865253 modified "2023-10-12" @default.
- W2004865253 title "Dual-gate induced InP nanowire diode" @default.
- W2004865253 doi "https://doi.org/10.1063/1.3666362" @default.
- W2004865253 hasPublicationYear "2011" @default.
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