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• W2004880009 abstract "Abstract The infrared luminescence of vanadium‐doped gallium nitride (GaN:V) grown by metalorganic vapour phase epitaxy technique (MOVPE) on SiN‐treated sapphire substrate were examined. Two spin allowed transitions were observed at 6633 cm ‐1 and 6959 cm ‐1 , and are respectively assigned to the 4 T 1 ( 4 P)→ 4 T 1 ( 4 F) and 4 A 2 ( 4 F) → 4 T 1 ( 4 F) transition of V 2+ (3d 3 ) in a tetrahedral symmetry with a 4 T 1 ground state. Crystal‐field calculation of the detected transition energies based on the Tanabe‐Sugano scheme is presented. Good agreements between theoretical and experimental energy levels are obtained. The presence of a series of vibronic state is also discussed in this work (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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• W2004880009 date "2011-03-31" @default.
• W2004880009 modified "2023-09-25" @default.
• W2004880009 title "Optical and theoretical investigations of V2+ ion in GaN" @default.
• W2004880009 doi "https://doi.org/10.1002/pssc.201000566" @default.
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