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- W2004938229 abstract "The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> N/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was controlled using AFM technique." @default.
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- W2004938229 date "2010-10-01" @default.
- W2004938229 modified "2023-10-09" @default.
- W2004938229 title "Reactive ion etching of AlxGa1−xN/GaN heterostructure using Cl2, BCl3/Ar gas plasma" @default.
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- W2004938229 doi "https://doi.org/10.1109/asdam.2010.5666352" @default.
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