Matches in SemOpenAlex for { <https://semopenalex.org/work/W2004995276> ?p ?o ?g. }
- W2004995276 abstract "The elemental redistribution and Ge loss in low-energy ${mathrm{Ge}}^{+}$ implanted ${mathrm{SiO}}_{2}$ films during wet-chemical cleaning and annealing procedures are investigated. Two effects of major importance for Ge nanocrystal formation have been found. Moisture components (${mathrm{H}}_{2}mathrm{O}$ vapor, ${mathrm{H}}^{+}$, ${mathrm{OH}}^{ensuremath{-}}$) penetrate into the damaged oxide during storage, wet chemical cleaning, or annealing procedures and lead to a hydrogen and oxygen enrichment in the near-surface oxide. Furthermore, atomic collisions during Ge implantation result in an oxygen excess (with respect to ${mathrm{SiO}}_{2}$ stoichiometry) underneath the Ge profile. The local net ratio of Ge and excess oxygen determines, whether the implanted Ge is incorporated into the ${mathrm{SiO}}_{2}$ network as spatially fixed ${mathrm{GeO}}_{2}$, oxidizes to mobile $mathrm{GeO}$, or remains as elemental Ge forming nanocrystals. Apart from very shallow profiles, where a drastic Ge loss is observed simply by cleaning in chemical solutions containing ${mathrm{H}}_{2}{mathrm{O}}_{2}$, the main Ge loss occurs during annealing. The highly mobile $mathrm{GeO}$ is identified to be responsible for both, Ge redistribution or even loss, if diffusing $mathrm{GeO}$ meets the ${mathrm{SiO}}_{2}$ surface and emanates into the annealing ambient. Annealing in $mathrm{Ar}∕{mathrm{H}}_{2}$ mixtures at $ensuremath{le}900phantom{rule{0.2em}{0ex}}ifmmode^circelsetextdegreefi{}mathrm{C}$ reduces the Ge loss due to the reduction of Ge oxides. The enhanced Ge mobility (as $mathrm{GeO}$) is described as an oxygen vacancy assisted mechanism which also explains the influence of the $mathrm{Si}∕{mathrm{SiO}}_{2}$ interface on the Ge diffusivity. Finally, the consequences of Ge redistribution and loss for Ge nanocrystal memory device fabrication are discussed." @default.
- W2004995276 created "2016-06-24" @default.
- W2004995276 creator A5029103337 @default.
- W2004995276 creator A5052880210 @default.
- W2004995276 date "2008-01-23" @default.
- W2004995276 modified "2023-09-23" @default.
- W2004995276 title "Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals in<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>films" @default.
- W2004995276 cites W1630835136 @default.
- W2004995276 cites W1656398603 @default.
- W2004995276 cites W1784718922 @default.
- W2004995276 cites W1963800500 @default.
- W2004995276 cites W1967170800 @default.
- W2004995276 cites W1967583888 @default.
- W2004995276 cites W1967668463 @default.
- W2004995276 cites W1973208581 @default.
- W2004995276 cites W1975454557 @default.
- W2004995276 cites W1977693714 @default.
- W2004995276 cites W1979223133 @default.
- W2004995276 cites W1980007845 @default.
- W2004995276 cites W1982682012 @default.
- W2004995276 cites W1983365479 @default.
- W2004995276 cites W1985726976 @default.
- W2004995276 cites W1986728336 @default.
- W2004995276 cites W1987403983 @default.
- W2004995276 cites W1997182640 @default.
- W2004995276 cites W1999898501 @default.
- W2004995276 cites W2004410026 @default.
- W2004995276 cites W2016776203 @default.
- W2004995276 cites W2017366968 @default.
- W2004995276 cites W2018200139 @default.
- W2004995276 cites W2021122851 @default.
- W2004995276 cites W2022185271 @default.
- W2004995276 cites W2026211199 @default.
- W2004995276 cites W2027619503 @default.
- W2004995276 cites W2031869547 @default.
- W2004995276 cites W2033613608 @default.
- W2004995276 cites W2034645508 @default.
- W2004995276 cites W2037302421 @default.
- W2004995276 cites W2038694217 @default.
- W2004995276 cites W2043178920 @default.
- W2004995276 cites W2043246803 @default.
- W2004995276 cites W2044285232 @default.
- W2004995276 cites W2053397313 @default.
- W2004995276 cites W2056900769 @default.
- W2004995276 cites W2058344683 @default.
- W2004995276 cites W2067023495 @default.
- W2004995276 cites W2067031784 @default.
- W2004995276 cites W2069451452 @default.
- W2004995276 cites W2069607200 @default.
- W2004995276 cites W2074137994 @default.
- W2004995276 cites W2085698034 @default.
- W2004995276 cites W2088182035 @default.
- W2004995276 cites W2088219067 @default.
- W2004995276 cites W2088949588 @default.
- W2004995276 cites W2089504329 @default.
- W2004995276 cites W2093236968 @default.
- W2004995276 cites W2095354988 @default.
- W2004995276 cites W2117330795 @default.
- W2004995276 cites W2132321654 @default.
- W2004995276 cites W2138534942 @default.
- W2004995276 cites W2143101742 @default.
- W2004995276 cites W2184385098 @default.
- W2004995276 cites W2327545824 @default.
- W2004995276 cites W2334378389 @default.
- W2004995276 cites W2750600939 @default.
- W2004995276 cites W3103863447 @default.
- W2004995276 cites W4206831427 @default.
- W2004995276 cites W4231943283 @default.
- W2004995276 cites W4247945442 @default.
- W2004995276 cites W4302577124 @default.
- W2004995276 cites W2025697430 @default.
- W2004995276 doi "https://doi.org/10.1103/physrevb.77.014107" @default.
- W2004995276 hasPublicationYear "2008" @default.
- W2004995276 type Work @default.
- W2004995276 sameAs 2004995276 @default.
- W2004995276 citedByCount "39" @default.
- W2004995276 countsByYear W20049952762012 @default.
- W2004995276 countsByYear W20049952762013 @default.
- W2004995276 countsByYear W20049952762014 @default.
- W2004995276 countsByYear W20049952762015 @default.
- W2004995276 countsByYear W20049952762016 @default.
- W2004995276 countsByYear W20049952762017 @default.
- W2004995276 countsByYear W20049952762018 @default.
- W2004995276 countsByYear W20049952762020 @default.
- W2004995276 countsByYear W20049952762021 @default.
- W2004995276 countsByYear W20049952762022 @default.
- W2004995276 crossrefType "journal-article" @default.
- W2004995276 hasAuthorship W2004995276A5029103337 @default.
- W2004995276 hasAuthorship W2004995276A5052880210 @default.
- W2004995276 hasConcept C113196181 @default.
- W2004995276 hasConcept C121332964 @default.
- W2004995276 hasConcept C144082473 @default.
- W2004995276 hasConcept C147789679 @default.
- W2004995276 hasConcept C171250308 @default.
- W2004995276 hasConcept C175854130 @default.
- W2004995276 hasConcept C17744445 @default.
- W2004995276 hasConcept C185592680 @default.
- W2004995276 hasConcept C191897082 @default.
- W2004995276 hasConcept C192562407 @default.
- W2004995276 hasConcept C199539241 @default.