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- W2005011750 abstract "In the process of preparation of high silicon steel by EB-PVD, the effect of distance between ingot and substrate on the weight percent of silicon in the silicon steel was investigated through specially designed experiment. Energy dispersive spectroscopy (EDS), optical microscope (OM), scanning electron microscopy (SEM), x-ray diffraction (XRD) were used to characterize the weight percent of silicon, microstructure, crystal grain size and phase of the high silicon steel. The experimental results show that the weight percent of silicon in the silicon steel decreases with increasing of the distance between ingot and substrate, when the distance is about 415 mm, high silicon steel can be fabricated by EB-PVD. The microstructure of the high silicon steel was composed of columnar crystal grain, the size of the crystal is about 25-50 μm. The material back to the substrate side is composed of B2 and exhibits strong {400} texture." @default.
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- W2005011750 date "2007-05-01" @default.
- W2005011750 modified "2023-09-26" @default.
- W2005011750 title "Preparation of High Silicon Steel by EB-PVD" @default.
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- W2005011750 doi "https://doi.org/10.4028/www.scientific.net/msf.546-549.1813" @default.
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