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- W2005013826 abstract "The Smart-Cut® process, based on hydrogen implantation and wafer bonding, is a generic thin layer process transfer. Unibond® SOI wafers are today in volume production, showing that splitting and bonding steps can be controlled, with high yields. Taking advantage of standard equipments flexibility, the process has been successfully scaled up to 300 mm. Most advanced 200 mm processes were successfully transferred to 300 mm, with wafers showing uniformity and defectivity results compatible with industry requirements for fully depleted device applications. The number of wafer solutions offered by the Smart-Cut® technology is already much greater than just SOI. Strained silicon on insulator, silicon on quartz (SOQ), single crystal silicon layer on plastic supports, silicon carbide on insulator, germanium on insulator, multilayer SOI structures are just few examples of the potential of Smart Cut® to engineer and design new substrates to answer the demands of the industry. A review of the progress achieved is given." @default.
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- W2005013826 date "2004-06-01" @default.
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- W2005013826 title "Smart-Cut® technology: from 300 mm ultrathin SOI production to advanced engineered substrates" @default.
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- W2005013826 doi "https://doi.org/10.1016/j.sse.2003.12.029" @default.
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