Matches in SemOpenAlex for { <https://semopenalex.org/work/W2005024084> ?p ?o ?g. }
- W2005024084 endingPage "08LC05" @default.
- W2005024084 startingPage "08LC05" @default.
- W2005024084 abstract "This study describes the low temperature process to form the gate oxide of MOSFETs using a SiO nano-powder and post UV oxidation. The high-quality SiO2 gate oxide was successfully formed on a silicon substrate by vacuum evaporation of the SiO nano-powder followed by the post UV oxidation in steam at 200 °C. However, further lowering of the oxidation temperature to 150 °C degraded the insulating property and increased the interface trap density. In order to improve the SiO2/Si interface quality, the Si surface was irradiated by vacuum UV (VUV) using a Xe excimer lamp before evaporation of the SiO nano-powder. This substrate treatment has substantially improved the SiO2/Si interface quality. The physical mechanisms of the VUV and UV oxidation are discussed in order to understand the low-temperature formation of the SiO2." @default.
- W2005024084 created "2016-06-24" @default.
- W2005024084 creator A5003386700 @default.
- W2005024084 creator A5040044670 @default.
- W2005024084 creator A5047371190 @default.
- W2005024084 creator A5085362920 @default.
- W2005024084 date "2014-07-23" @default.
- W2005024084 modified "2023-09-28" @default.
- W2005024084 title "High-quality gate oxide formed at 150 °C for flexible electronics" @default.
- W2005024084 cites W1488501388 @default.
- W2005024084 cites W1596929616 @default.
- W2005024084 cites W1968120679 @default.
- W2005024084 cites W1968396292 @default.
- W2005024084 cites W1972832375 @default.
- W2005024084 cites W1976047537 @default.
- W2005024084 cites W1999717456 @default.
- W2005024084 cites W2001901605 @default.
- W2005024084 cites W2005042798 @default.
- W2005024084 cites W2011425120 @default.
- W2005024084 cites W2014578028 @default.
- W2005024084 cites W2019664573 @default.
- W2005024084 cites W2022437009 @default.
- W2005024084 cites W2024132473 @default.
- W2005024084 cites W2027782154 @default.
- W2005024084 cites W2037038670 @default.
- W2005024084 cites W2037116094 @default.
- W2005024084 cites W2037196304 @default.
- W2005024084 cites W2039555123 @default.
- W2005024084 cites W2040874147 @default.
- W2005024084 cites W2058926908 @default.
- W2005024084 cites W2069496924 @default.
- W2005024084 cites W2079556890 @default.
- W2005024084 cites W2084280323 @default.
- W2005024084 cites W2090452659 @default.
- W2005024084 cites W2118636832 @default.
- W2005024084 cites W2135957828 @default.
- W2005024084 cites W2149217004 @default.
- W2005024084 doi "https://doi.org/10.7567/jjap.53.08lc05" @default.
- W2005024084 hasPublicationYear "2014" @default.
- W2005024084 type Work @default.
- W2005024084 sameAs 2005024084 @default.
- W2005024084 citedByCount "2" @default.
- W2005024084 countsByYear W20050240842015 @default.
- W2005024084 crossrefType "journal-article" @default.
- W2005024084 hasAuthorship W2005024084A5003386700 @default.
- W2005024084 hasAuthorship W2005024084A5040044670 @default.
- W2005024084 hasAuthorship W2005024084A5047371190 @default.
- W2005024084 hasAuthorship W2005024084A5085362920 @default.
- W2005024084 hasConcept C111368507 @default.
- W2005024084 hasConcept C121332964 @default.
- W2005024084 hasConcept C127313418 @default.
- W2005024084 hasConcept C127413603 @default.
- W2005024084 hasConcept C165801399 @default.
- W2005024084 hasConcept C171250308 @default.
- W2005024084 hasConcept C172385210 @default.
- W2005024084 hasConcept C19067145 @default.
- W2005024084 hasConcept C191897082 @default.
- W2005024084 hasConcept C192562407 @default.
- W2005024084 hasConcept C2361726 @default.
- W2005024084 hasConcept C2777289219 @default.
- W2005024084 hasConcept C2779192298 @default.
- W2005024084 hasConcept C2779851234 @default.
- W2005024084 hasConcept C42360764 @default.
- W2005024084 hasConcept C49040817 @default.
- W2005024084 hasConcept C544956773 @default.
- W2005024084 hasConcept C61441594 @default.
- W2005024084 hasConcept C62520636 @default.
- W2005024084 hasConcept C97355855 @default.
- W2005024084 hasConceptScore W2005024084C111368507 @default.
- W2005024084 hasConceptScore W2005024084C121332964 @default.
- W2005024084 hasConceptScore W2005024084C127313418 @default.
- W2005024084 hasConceptScore W2005024084C127413603 @default.
- W2005024084 hasConceptScore W2005024084C165801399 @default.
- W2005024084 hasConceptScore W2005024084C171250308 @default.
- W2005024084 hasConceptScore W2005024084C172385210 @default.
- W2005024084 hasConceptScore W2005024084C19067145 @default.
- W2005024084 hasConceptScore W2005024084C191897082 @default.
- W2005024084 hasConceptScore W2005024084C192562407 @default.
- W2005024084 hasConceptScore W2005024084C2361726 @default.
- W2005024084 hasConceptScore W2005024084C2777289219 @default.
- W2005024084 hasConceptScore W2005024084C2779192298 @default.
- W2005024084 hasConceptScore W2005024084C2779851234 @default.
- W2005024084 hasConceptScore W2005024084C42360764 @default.
- W2005024084 hasConceptScore W2005024084C49040817 @default.
- W2005024084 hasConceptScore W2005024084C544956773 @default.
- W2005024084 hasConceptScore W2005024084C61441594 @default.
- W2005024084 hasConceptScore W2005024084C62520636 @default.
- W2005024084 hasConceptScore W2005024084C97355855 @default.
- W2005024084 hasIssue "8S1" @default.
- W2005024084 hasLocation W20050240841 @default.
- W2005024084 hasOpenAccess W2005024084 @default.
- W2005024084 hasPrimaryLocation W20050240841 @default.
- W2005024084 hasRelatedWork W1968277604 @default.
- W2005024084 hasRelatedWork W1976598848 @default.
- W2005024084 hasRelatedWork W2055040111 @default.
- W2005024084 hasRelatedWork W2092438402 @default.
- W2005024084 hasRelatedWork W2153701889 @default.
- W2005024084 hasRelatedWork W2329726729 @default.