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• W2005072480 endingPage "320" @default.
• W2005072480 startingPage "313" @default.
• W2005072480 abstract "실리콘(Silicon, Si) 기판과 <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs 다중 양자 우물(multiple quantum wells, MQWs) 간의 격자 부정합 해소를 위해 <TEX>$AlAs_xSb_{1-x}$</TEX> 층이 단계 성분 변화 완충층(step-graded buffer, SGB)으로 이용되었다. <TEX>$AlAs_xSb_{1-x}$</TEX> 층 상에 형성된 GaAs 층의 RMS 표면 거칠기(root-mean-square surface roughness)는 <TEX>$10{times}10{mu}m$</TEX> 원자 힘 현미경(atomic force microscope, AFM) 이미지 상에서 약 1.7 nm로 측정되었다. <TEX>$AlAs_xSb_{1-x}$</TEX>/Si 기판 상에 AlAs/GaAs 단주기 초격자(short period superlattice, SPS)를 이용한 <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs MQWs이 형성되었다. <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs MQW 구조는 약 10 켈빈(Kalvin, K)에서 813 nm 부근의 매우 약한 포토루미네선스(photoluminescence, PL) 피크를 보였고, <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs MQW 구조의 RMS 표면 거칠기는 약 42.9 nm로 측정되었다. 전자 투과 현미경(transmission electron microscope, TEM) 단면 이미지 상에서 AlAs/GaAs SPS 로부터 <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs MQWs까지 격자 결함들(defects)이 관찰되었고, 이는 격자 결함들이 <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs MQW 구조의 표면 거칠기와 광 특성에 영향을 주었음을 보여준다. The <TEX>$AlAs_xSb_{1-x}$</TEX> step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on <TEX>$AlAs_xSb_{1-x}$</TEX> step-graded buffer layer was ~1.7 nm. <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the <TEX>$AlAs_xSb_{1-x}$</TEX>/Si substrate. Photoluminescence (PL) peak at 10 K for the <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the <TEX>$Al_{0.3}Ga_{0.7}As$</TEX>/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects." @default.
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• W2005072480 date "2013-11-30" @default.
• W2005072480 modified "2023-09-27" @default.
• W2005072480 title "Formation of Al0.3Ga0.7As/GaAs Multiple Quantum Wells on Silicon Substrate with AlAsxSb1-xStep-graded Buffer" @default.
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• W2005072480 doi "https://doi.org/10.5757/jkvs.2013.22.6.313" @default.
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