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- W2005099368 abstract "Excess-carrier recombination in undoped BaSi <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> epitaxial films grown by molecular beam epitaxy on n-type silicon has been studied by the microwave-detected photoconductivity decay measurement. The measurement with various excitation laser intensities shows that dominant recombination processes change from Auger recombination to Shockley-Read-Hall recombination, and to carrier trapping with time. The numerical analysis of the Shockley-Read-Hall recombination lifetime and the X-ray rocking curve measurement of the films of 50-130 nm in thickness show that carrier capture probability has a positive correlation with the full-width at half-maximum of X-ray rocking curves, suggesting that dislocations act as recombination centers." @default.
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- W2005099368 date "2012-06-01" @default.
- W2005099368 modified "2023-09-23" @default.
- W2005099368 title "Investigation of the carrier recombination process in undoped barium disilicide epitaxial films" @default.
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- W2005099368 doi "https://doi.org/10.1109/pvsc.2012.6317816" @default.
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