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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2005113375> ?p ?o ?g. }

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• W2005113375 abstract "The selective growth of wurtzite GaN was performed on a (1 1 1)silicon substrate by metalorganic vapor phase epitaxy. By limiting the size of GaN to the area of 0.5 mm×0.5 mm, a single GaN crystal without cracks was obtained. As a result, the full-width at half-maximum of the (0 0 0 4) X-ray-rocking curve as well as that of the band edge emission were much reduced as compared to the samples grown by a conventional method." @default.
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• W2005113375 date "2002-07-01" @default.
• W2005113375 modified "2023-09-26" @default.
• W2005113375 title "Growth of a GaN crystal free from cracks on a (1 1 1)Si substrate by selective MOVPE" @default.
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• W2005113375 doi "https://doi.org/10.1016/s0022-0248(02)01352-0" @default.
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