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- W2005141805 abstract "We have investigated the relationship between surface morphology and electronic structure of MnAs on GaAs (001) depending on the MnAs layer thickness using in situ photoemission spectroscopy. For less than 4 ML (monolayer) growth of MnAs, metallic and ferromagnetic properties were not observed due to the island growth. Valence-band photoemission spectra revealed that the localized Mn 3d states for less than 4 ML growth gradually change to the itinerant characteristics with increasing MnAs layer thickness. Core-level photoemission spectra have revealed that the Ga atoms are not segregated onto the surface and an abrupt interface is identified." @default.
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- W2005141805 date "2006-07-10" @default.
- W2005141805 modified "2023-10-16" @default.
- W2005141805 title "Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy" @default.
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- W2005141805 doi "https://doi.org/10.1063/1.2217256" @default.
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