Matches in SemOpenAlex for { <https://semopenalex.org/work/W2005163094> ?p ?o ?g. }
- W2005163094 endingPage "065002" @default.
- W2005163094 startingPage "065002" @default.
- W2005163094 abstract "Pure and 1 at% gallium (Ga)-doped zinc oxide (ZnO) thin films have been prepared with a low-cost spin coating technique on quartz substrates and annealed at 500 °C in vacuum ∼10−3 mbar to create anion vacancies and generate charge carriers for photovoltaic application. Also, 0.5–1.5 at% extra zinc species were added in the precursor sol to investigate changes in film growth, morphology, optical absorption, electrical properties and photoluminescence. It is shown that 1 at% Ga–ZnO thin films with 0.5 at% extra zinc content after vacuum annealing for 60 min correspond to wurtzite-type hexagonal structure with (0001) preferred orientation, electrical resistivity of ∼9 × 10−3 Ω cm and optical transparency of ∼65–90% in the visible range. Evidence has been advanced for the presence of defect levels within bandgap such as zinc vacancy (VZn), zinc interstitial (Zni), oxygen vacancy (Vo) and oxygen interstitial (Oi). Further, variation in ZnO optical bandgap occurring with Ga doping and insertion of additional zinc species has been explained by invoking two competing phenomena, namely bandgap widening and renormalization, usually observed in semiconductors with increasing carrier concentration." @default.
- W2005163094 created "2016-06-24" @default.
- W2005163094 creator A5046210720 @default.
- W2005163094 creator A5067406889 @default.
- W2005163094 date "2013-03-01" @default.
- W2005163094 modified "2023-10-15" @default.
- W2005163094 title "Effect of zinc addition and vacuum annealing time on the properties of spin-coated low-cost transparent conducting 1 at% Ga–ZnO thin films" @default.
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- W2005163094 doi "https://doi.org/10.1088/1468-6996/14/6/065002" @default.