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• W2005173764 abstract "Angle-resolved X-ray photoelectron spectroscopy (XPS) has been used to characterise chemically etched GaAs(001) versus epitaxially grown surfaces. The measured amplitude of X-ray photoelectron diffraction (XPD) modulation is then an excellent probe of the local structural environment around the emitter atom in the near-surface substrate. The observed modulations are here compared to the results of single- and double-scattering cluster calculations with a fine agreement. Moreover, because of our choice of the emission plane and taking into account the similarity in the scattering factors of Ga and As atoms, XPD effects can be almost eliminated from the angular variation of the fractional peak ratio IAs(IAs + IGa) which is then easily related to the arsenic concentration profile CAs(z). A best-fitting procedure is used to select the experimental concentration depth profile which characterises the surface under study. Samples exposed to different technological treatments, like ion implantation, chemical etching and annealing have been studied and compared. The concentrations of As atoms at the surface for As-capped, MBE-grown (001) samples after annealing around 350°C and for chemically etched GaAs(001) wafers indicate the same type of surface (As-terminated) as far as composition and structure are concerned." @default.
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• W2005173764 date "1994-05-01" @default.
• W2005173764 modified "2023-10-05" @default.
• W2005173764 title "Angle-resolved x-ray photoemission study of GaAs(001) surfaces" @default.
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• W2005173764 doi "https://doi.org/10.1016/0169-4332(94)90024-8" @default.
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