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- W2005174773 abstract "The electronic structure and optical properties of III-V and II-VI semiconductor superlattices are treated theoretically using a superlattice-representation formalism. The band structure is obtained from superlattice Kensuremath{cdot}p theory. The theory is based on closed analytic calculations of the superlattice states at wave vector K=0 and the envelope-function approach. The known parameters of the bulk constituents represent the only input. The electron effective masses and gaps of GaAs/${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathrm{x}}$${mathrm{Al}}_{mathrm{x}}$As (type I), InAs/GaSb (type II), and HgTe/CdTe (type III) are investigated for a wide range of layer widths using the recently deduced large valence-band offset of HgTe/CdTe. The behavior of the masses is also discussed in terms of the f-sum rule. The calculated fundamental absorption coefficients for InAs/GaSb and HgTe/CdTe are in excellent agreement with experimental data. The intersubband absorption between the lowest two superlattice conduction bands is investigated. In the thick-barrier limit of GaAs/${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathrm{x}}$${mathrm{Al}}_{mathrm{x}}$As the absorption can be larger than the fundamental absorption and as narrow as a laser linewidth. In the thin-barrier limit the absorption is smaller and broader, as illustrated for ${mathrm{In}}_{mathrm{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathrm{x}}$As/${mathrm{In}}_{mathrm{y}}$${mathrm{Al}}_{1mathrm{ensuremath{-}}mathrm{y}}$As." @default.
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- W2005174773 date "1990-02-15" @default.
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- W2005174773 title "Electronic and optical properties of III-V and II-VI semiconductor superlattices" @default.
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- W2005174773 doi "https://doi.org/10.1103/physrevb.41.3655" @default.
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