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• W200517912 abstract "Current-voltage (I-V), ac capacitance-voltage (C-V), and conductance-voltage (G-V) measurements have been made of the effect of magnetic fields up to 15 T on tunneling at 1.6 K from accumulation layers on n-type GaAs. The samples used are ${n}^{mathrm{ensuremath{-}}}$-GaAs--${mathrm{Al}}_{mathrm{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathrm{x}}$As--n $^{+}$-GaAs capacitors in which the GaAs/${mathrm{Al}}_{mathrm{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathrm{x}}$As barrier height is low enough, ensuremath{sim}0.3 eV, and the ${mathrm{Al}}_{mathrm{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathrm{x}}$As is thin enough, ensuremath{sim}20 nm, that direct tunneling of electrons occurs. Magnetic freezeout of carriers in ${n}^{mathrm{ensuremath{-}}}$-GaAs for Hensuremath{gtrsim}4 T can be determined from C-V curves. For ${n}^{+}$-GaAs biased positive, ${V}_{G}$>0, a quantized accumulation layer forms at the ${n}^{mathrm{ensuremath{-}}}$-GaAs/${mathrm{Al}}_{mathrm{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathrm{x}}$As interface. Structure is observed in I-V, C-V, and G-V curves due to tunneling from Landau levels in the accumulation layer. Two samples are compared in detail. In one sample the Landau-level structure is relatively simple. In the other, spin splitting is observed in the first three Landau levels. The dependence of the surface concentration of electrons on ${V}_{G}$ is determined from tunneling currents at fixed ${V}_{G}$ and varying magnetic field. A second subband in the accumulation layer begins to be populated when the surface concentration ensuremath{gtrsim}7ifmmodetimeselsetexttimesfi{}${10}^{11}$/${mathrm{cm}}^{2}$. This is the first example of a system in which it is possible to use tunneling to examine the formation of an accumulation layer in a semiconductor, going from depletion through flat-band into accumulation, by applying a bias voltage." @default.
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• W200517912 date "1985-11-15" @default.
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• W200517912 title "Magnetotunneling from accumulation layers in<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant=normal>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant=…" @default.
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• W200517912 doi "https://doi.org/10.1103/physrevb.32.6531" @default.
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