Matches in SemOpenAlex for { <https://semopenalex.org/work/W2005259222> ?p ?o ?g. }
Showing items 1 to 74 of
74
with 100 items per page.
- W2005259222 abstract "Antireflective coatings (ARCs) have been used to enhance IC lithography for years, however, many conventional bottom ARCs can no longer maintain acceptable linewidth control, cannot meet stringent deep-UV (DUV) photoresist processing requirements, and increase the etch complexity. In this paper, we report the development of an inorganic ARC for DUV lithography in sub-0.25 micrometer advanced device applications. Plasma-enhanced chemical vapor deposition (PECVD) is employed to deposit a dielectric film silicon oxynitride (Si<SUB>x</SUB>O<SUB>y</SUB>N<SUB>z</SUB>) with specific optical properties. The three optical parameters of the Si<SUB>x</SUB>O<SUB>y</SUB>N<SUB>z</SUB> film: refractive index n, extinction coefficient k, and thickness d are specifically designed to ensure that the reflection light that passes through the ARC/substrate is equal in amplitude and opposite in phase to the reflected light from the resist/ARC interface. The reflection light is canceled by destructive interference and therefore photoresist receives the minimum substrate reflection wave. Using this technique, we have successfully patterned features at 0.25 micrometer and below. The dielectric film can not only function as an ARC layer, but also serve as a hardmask for the pattern transfer etch process. With an aggressive etch bias process, linewidths down to 0.60 micrometer poly-Si gate are achieved with good linewidth control (3(sigma) less than 12 nm) and a near perfect linearity. For the marginal metal etch resistance of DUV photoresist, the designed Si<SUB>x</SUB>O<SUB>y</SUB>N<SUB>z</SUB> is effective in imparting more etch resistance and suppressing metal substrate reflection. Excellent optical uniformity of the n, k and thickness d of the Si<SUB>x</SUB>O<SUB>y</SUB>N<SUB>z</SUB> ARC is obtained with a manufacturable PECVD deposition process." @default.
- W2005259222 created "2016-06-24" @default.
- W2005259222 creator A5003959057 @default.
- W2005259222 creator A5015059768 @default.
- W2005259222 creator A5032133880 @default.
- W2005259222 creator A5046616581 @default.
- W2005259222 creator A5054374275 @default.
- W2005259222 creator A5065326581 @default.
- W2005259222 creator A5077104957 @default.
- W2005259222 date "1998-06-29" @default.
- W2005259222 modified "2023-10-16" @default.
- W2005259222 title "Inorganic antireflective coating process for deep-UV lithography" @default.
- W2005259222 doi "https://doi.org/10.1117/12.310763" @default.
- W2005259222 hasPublicationYear "1998" @default.
- W2005259222 type Work @default.
- W2005259222 sameAs 2005259222 @default.
- W2005259222 citedByCount "3" @default.
- W2005259222 crossrefType "proceedings-article" @default.
- W2005259222 hasAuthorship W2005259222A5003959057 @default.
- W2005259222 hasAuthorship W2005259222A5015059768 @default.
- W2005259222 hasAuthorship W2005259222A5032133880 @default.
- W2005259222 hasAuthorship W2005259222A5046616581 @default.
- W2005259222 hasAuthorship W2005259222A5054374275 @default.
- W2005259222 hasAuthorship W2005259222A5065326581 @default.
- W2005259222 hasAuthorship W2005259222A5077104957 @default.
- W2005259222 hasConcept C100460472 @default.
- W2005259222 hasConcept C105487726 @default.
- W2005259222 hasConcept C108406538 @default.
- W2005259222 hasConcept C120665830 @default.
- W2005259222 hasConcept C121332964 @default.
- W2005259222 hasConcept C133386390 @default.
- W2005259222 hasConcept C134406635 @default.
- W2005259222 hasConcept C142181693 @default.
- W2005259222 hasConcept C171250308 @default.
- W2005259222 hasConcept C192562407 @default.
- W2005259222 hasConcept C204223013 @default.
- W2005259222 hasConcept C2779227376 @default.
- W2005259222 hasConcept C41794268 @default.
- W2005259222 hasConcept C49040817 @default.
- W2005259222 hasConcept C520434653 @default.
- W2005259222 hasConcept C53524968 @default.
- W2005259222 hasConceptScore W2005259222C100460472 @default.
- W2005259222 hasConceptScore W2005259222C105487726 @default.
- W2005259222 hasConceptScore W2005259222C108406538 @default.
- W2005259222 hasConceptScore W2005259222C120665830 @default.
- W2005259222 hasConceptScore W2005259222C121332964 @default.
- W2005259222 hasConceptScore W2005259222C133386390 @default.
- W2005259222 hasConceptScore W2005259222C134406635 @default.
- W2005259222 hasConceptScore W2005259222C142181693 @default.
- W2005259222 hasConceptScore W2005259222C171250308 @default.
- W2005259222 hasConceptScore W2005259222C192562407 @default.
- W2005259222 hasConceptScore W2005259222C204223013 @default.
- W2005259222 hasConceptScore W2005259222C2779227376 @default.
- W2005259222 hasConceptScore W2005259222C41794268 @default.
- W2005259222 hasConceptScore W2005259222C49040817 @default.
- W2005259222 hasConceptScore W2005259222C520434653 @default.
- W2005259222 hasConceptScore W2005259222C53524968 @default.
- W2005259222 hasLocation W20052592221 @default.
- W2005259222 hasOpenAccess W2005259222 @default.
- W2005259222 hasPrimaryLocation W20052592221 @default.
- W2005259222 hasRelatedWork W1998659602 @default.
- W2005259222 hasRelatedWork W2038369548 @default.
- W2005259222 hasRelatedWork W2038615697 @default.
- W2005259222 hasRelatedWork W2070089925 @default.
- W2005259222 hasRelatedWork W2082661878 @default.
- W2005259222 hasRelatedWork W2099612599 @default.
- W2005259222 hasRelatedWork W3007549791 @default.
- W2005259222 hasRelatedWork W3091884080 @default.
- W2005259222 hasRelatedWork W3112229328 @default.
- W2005259222 hasRelatedWork W2485647619 @default.
- W2005259222 isParatext "false" @default.
- W2005259222 isRetracted "false" @default.
- W2005259222 magId "2005259222" @default.
- W2005259222 workType "article" @default.