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- W2005277798 abstract "GaP epilayers and strained-barrier GaP/GaAs/GaP quantum wells were deposited upon GaAs (001) substrates at low temperatures by organometallic atomic layer epitaxy. Very uniform GaP films with thicknesses in the range of a few thousand angstroms can be achieved by layer-by-layer growth. Transmission electron microscopy studies show that the critical thickness of the GaP strained layer on (001) GaAs is not more than 60 Å. Abrupt strained-barrier GaP/GaAs/GaP quantum wells were also achieved. Photoluminescence measurements on the unrelaxed quantum wells show sharp quantum-well emissions. Most of the dislocations appear to be of the misfit type as the GaP layer thickness increases further." @default.
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- W2005277798 title "Growth and characterization of strained GaP films and strainedbarrier GaP/GaAs/GaP quantum wells on GaAs substrates" @default.
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- W2005277798 doi "https://doi.org/10.1016/0254-0584(94)90147-3" @default.
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