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- W2005280106 abstract "We have theoretically investigated the effects of random discrete dopant (RDD) distribution on the device characteristics in silicon nanowire (NW) transistors by performing non-equilibrium Green's function simulation combined with kinetic Monte Carlo method for generating RDD distribution. We show that a small number of dopant atoms diffusing into the channel have a significant impact on the threshold voltage (V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</inf> ) variation. We examine the dependence of the V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</inf> variation on RDD distribution and find that the fluctuation can be significantly reduced by introducing side-wall gate spacers. We also find that the on-current fluctuation is mainly caused by randomness of As dopants in the source and drain extensions and hence is inherent in ultra-small NW transistors." @default.
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- W2005280106 date "2012-12-01" @default.
- W2005280106 modified "2023-09-25" @default.
- W2005280106 title "Simulation of the effect of arsenic discrete distribution on device characteristics in silicon nanowire transistors" @default.
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- W2005280106 doi "https://doi.org/10.1109/iedm.2012.6479137" @default.
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