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• W2005309075 endingPage "1962" @default.
• W2005309075 startingPage "1956" @default.
• W2005309075 abstract "Silicon nitride films were deposited in a nitrogen gas plasma by an 'activated reactive evaporation' (ARE) process on silicon substrates maintained at room temperature. Silicon powder was evaporated by e-beam evaporation in the presence of the nitrogen gas plasma excited by a radio frequency (RF) power source (13.56 MHz). The films deposited at 80 W RF plasma power for 30 min deposition time were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy and ellipsometry techniques. The x-ray diffraction pattern reveals the polycrystalline nature of the films with characteristics of hexagonal structure even at room temperature. X-ray photoelectron spectroscopy showed formation of silicon-rich silicon nitride. The FTIR spectrum shows Si–N bond formation and absence of Si–H bond, indicating hydrogen-free films. Scanning electron microscope shows pinhole and crack-free surface of the films without any particulates of silicon on the surface. The refractive index (η) and the thickness (d) are observed to be 1.99 and 1800 Å, respectively. The present work also describes the results on application of 'ARE' silicon nitride thin films as a masking material for the anisotropic etching of silicon in aqueous KOH solution. A pattern was lithographically transferred through the masking material on the silicon substrate. The etch rate of the films ∼4 Å min−1 was calculated from the masking time data of the films. The activation energy of 0.52 eV was determined by the relationship between temperature and the rate constant, which is in good agreement with the results reported in the literature. The etch rate value is low as compared to the etch rate of the conventional masking materials (60 Å min−1 for SiO2 and 8 Å min−1 for LPCVD Si3N4). Thus, 'ARE' silicon nitride films withstand higher concentrations of KOH for larger time periods compared to the conventional masking materials and act as a good masking material for MEMS." @default.
• W2005309075 created "2016-06-24" @default.
• W2005309075 creator A5029597432 @default.
• W2005309075 creator A5058112171 @default.
• W2005309075 date "2005-09-06" @default.
• W2005309075 modified "2023-10-01" @default.
• W2005309075 title "Activated reactive evaporation deposited silicon nitride as a masking material for MEMS fabrication" @default.
• W2005309075 cites W1670172520 @default.
• W2005309075 cites W1971396421 @default.
• W2005309075 cites W1973864255 @default.
• W2005309075 cites W1975992633 @default.
• W2005309075 cites W1980655902 @default.
• W2005309075 cites W1984221556 @default.
• W2005309075 cites W1984760422 @default.
• W2005309075 cites W2013647247 @default.
• W2005309075 cites W2014000090 @default.
• W2005309075 cites W2020301230 @default.
• W2005309075 cites W2033220483 @default.
• W2005309075 cites W2048458633 @default.
• W2005309075 cites W2052341660 @default.
• W2005309075 cites W2064880625 @default.
• W2005309075 cites W2076388112 @default.
• W2005309075 cites W2083745542 @default.
• W2005309075 cites W2084859217 @default.
• W2005309075 cites W2089357978 @default.
• W2005309075 cites W2127989919 @default.
• W2005309075 cites W2137178805 @default.
• W2005309075 cites W2598868313 @default.
• W2005309075 cites W4246356336 @default.
• W2005309075 doi "https://doi.org/10.1088/0960-1317/15/10/023" @default.
• W2005309075 hasPublicationYear "2005" @default.
• W2005309075 type Work @default.
• W2005309075 sameAs 2005309075 @default.
• W2005309075 citedByCount "13" @default.
• W2005309075 countsByYear W20053090752012 @default.
• W2005309075 countsByYear W20053090752015 @default.
• W2005309075 countsByYear W20053090752016 @default.
• W2005309075 countsByYear W20053090752017 @default.
• W2005309075 crossrefType "journal-article" @default.
• W2005309075 hasAuthorship W2005309075A5029597432 @default.
• W2005309075 hasAuthorship W2005309075A5058112171 @default.
• W2005309075 hasConcept C100460472 @default.
• W2005309075 hasConcept C111368507 @default.
• W2005309075 hasConcept C113196181 @default.
• W2005309075 hasConcept C120665830 @default.
• W2005309075 hasConcept C121332964 @default.
• W2005309075 hasConcept C127313418 @default.
• W2005309075 hasConcept C127413603 @default.
• W2005309075 hasConcept C130472188 @default.
• W2005309075 hasConcept C159985019 @default.
• W2005309075 hasConcept C160892712 @default.
• W2005309075 hasConcept C171250308 @default.
• W2005309075 hasConcept C175708663 @default.
• W2005309075 hasConcept C185592680 @default.
• W2005309075 hasConcept C19067145 @default.
• W2005309075 hasConcept C192562407 @default.
• W2005309075 hasConcept C26771246 @default.
• W2005309075 hasConcept C2777289219 @default.
• W2005309075 hasConcept C2777431650 @default.
• W2005309075 hasConcept C2779227376 @default.
• W2005309075 hasConcept C2779476251 @default.
• W2005309075 hasConcept C42360764 @default.
• W2005309075 hasConcept C43617362 @default.
• W2005309075 hasConcept C49040817 @default.
• W2005309075 hasConcept C544956773 @default.
• W2005309075 hasConceptScore W2005309075C100460472 @default.
• W2005309075 hasConceptScore W2005309075C111368507 @default.
• W2005309075 hasConceptScore W2005309075C113196181 @default.
• W2005309075 hasConceptScore W2005309075C120665830 @default.
• W2005309075 hasConceptScore W2005309075C121332964 @default.
• W2005309075 hasConceptScore W2005309075C127313418 @default.
• W2005309075 hasConceptScore W2005309075C127413603 @default.
• W2005309075 hasConceptScore W2005309075C130472188 @default.
• W2005309075 hasConceptScore W2005309075C159985019 @default.
• W2005309075 hasConceptScore W2005309075C160892712 @default.
• W2005309075 hasConceptScore W2005309075C171250308 @default.
• W2005309075 hasConceptScore W2005309075C175708663 @default.
• W2005309075 hasConceptScore W2005309075C185592680 @default.
• W2005309075 hasConceptScore W2005309075C19067145 @default.
• W2005309075 hasConceptScore W2005309075C192562407 @default.
• W2005309075 hasConceptScore W2005309075C26771246 @default.
• W2005309075 hasConceptScore W2005309075C2777289219 @default.
• W2005309075 hasConceptScore W2005309075C2777431650 @default.
• W2005309075 hasConceptScore W2005309075C2779227376 @default.
• W2005309075 hasConceptScore W2005309075C2779476251 @default.
• W2005309075 hasConceptScore W2005309075C42360764 @default.
• W2005309075 hasConceptScore W2005309075C43617362 @default.
• W2005309075 hasConceptScore W2005309075C49040817 @default.
• W2005309075 hasConceptScore W2005309075C544956773 @default.
• W2005309075 hasIssue "10" @default.
• W2005309075 hasLocation W20053090751 @default.
• W2005309075 hasOpenAccess W2005309075 @default.
• W2005309075 hasPrimaryLocation W20053090751 @default.
• W2005309075 hasRelatedWork W1535647204 @default.
• W2005309075 hasRelatedWork W1974891863 @default.
• W2005309075 hasRelatedWork W1984345909 @default.
• W2005309075 hasRelatedWork W1990208142 @default.
• W2005309075 hasRelatedWork W1993535388 @default.

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