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- W2005331405 abstract "Substrate pretreatment conditions at low pressures have been examined for enhancing nanocrystalline diamond formation on silicon in electron cyclotron resonance (ECR) plasma. Three kinds of pretreatments, (I) exposure to an ECR H2 plasma with application of a substrate bias from −100to+30V, (II) hot-filament heating in H2 gas, and (III) hot-filament heating in vacuum, were used alone or followed by carburization prior to a two-step process of ion-enhanced nucleation in an ECR plasma and subsequent growth in a hot-filament system. The number density of diamond particles after the final growth step was greatly increased up to the order of 107–108cm−2 when applying pretreatment (I) at the bias of 0V corresponding to the ion-bombardment energy of around 10eV. In this treatment, a clean and smooth surface with minimal damage was made by the dominance of anisotropic etching by hydrogen ions over isotropic etching by hydrogen atoms. The number density of diamond particles was still more increased when applying pretreatment (II), but the treated surface was unfavorably contaminated and roughened." @default.
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- W2005331405 date "2006-08-03" @default.
- W2005331405 modified "2023-09-27" @default.
- W2005331405 title "In vacuosubstrate pretreatments for enhancing nanodiamond formation in electron cyclotron resonance plasma" @default.
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- W2005331405 doi "https://doi.org/10.1116/1.2221322" @default.
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