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• W2005333790 abstract "Pure SixC1−x (x &gt; 0.5) and B-containing SixC1−x (x &gt; 0.5) based resistive switching devices (RSD) with the structure of Ag/SixC1−x/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/ de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into SixC1−x, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for the SiC-based RSD, which have a potential application in extreme ambient conditions." @default.
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• W2005333790 date "2014-08-13" @default.
• W2005333790 modified "2023-09-27" @default.
• W2005333790 title "Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/Si_xC_1−x/p-Si" @default.
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• W2005333790 doi "https://doi.org/10.1063/1.4893016" @default.
• W2005333790 hasPublicationYear "2014" @default.
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