Matches in SemOpenAlex for { <https://semopenalex.org/work/W2005337151> ?p ?o ?g. }
Showing items 1 to 58 of
58
with 100 items per page.
- W2005337151 endingPage "891" @default.
- W2005337151 startingPage "887" @default.
- W2005337151 abstract "Abstract A typical NMOS process with Sealed Interface Local Oxidation (SILO) technology as the devise isolation technique was used to fabricate active and parasitic devices. The electrical characteristics are presented. The influence of the boron channel stop lateral diffusion into the active region on the narrow channel effect, the effective channel width, and the subthreshold current is discussed. The low leakage current of the subthreshold characteristics demonstrates the integrity of the isolation technique. Electrical measurements on N + P diodes with different perimeters reveal a weak defect generation during field oxidation. All the results indicate that the fully-recessed SILO process is capable of replacing the conventional LOCOS technique in the micron and submicron technologies, with advantage in the planarity of the isolation process." @default.
- W2005337151 created "2016-06-24" @default.
- W2005337151 creator A5014842357 @default.
- W2005337151 creator A5036053162 @default.
- W2005337151 date "1988-05-01" @default.
- W2005337151 modified "2023-10-02" @default.
- W2005337151 title "SILO isolation technique: A study of active and parasitic device characteristics with semi-recessed and fully-recessed field oxides" @default.
- W2005337151 cites W2000958511 @default.
- W2005337151 cites W2041885398 @default.
- W2005337151 cites W2061567327 @default.
- W2005337151 cites W2110942830 @default.
- W2005337151 cites W2138861361 @default.
- W2005337151 cites W2044176351 @default.
- W2005337151 doi "https://doi.org/10.1016/0038-1101(88)90042-1" @default.
- W2005337151 hasPublicationYear "1988" @default.
- W2005337151 type Work @default.
- W2005337151 sameAs 2005337151 @default.
- W2005337151 citedByCount "3" @default.
- W2005337151 crossrefType "journal-article" @default.
- W2005337151 hasAuthorship W2005337151A5014842357 @default.
- W2005337151 hasAuthorship W2005337151A5036053162 @default.
- W2005337151 hasConcept C127413603 @default.
- W2005337151 hasConcept C192562407 @default.
- W2005337151 hasConcept C2775941552 @default.
- W2005337151 hasConcept C2778024958 @default.
- W2005337151 hasConcept C49040817 @default.
- W2005337151 hasConcept C78519656 @default.
- W2005337151 hasConcept C86803240 @default.
- W2005337151 hasConcept C89423630 @default.
- W2005337151 hasConceptScore W2005337151C127413603 @default.
- W2005337151 hasConceptScore W2005337151C192562407 @default.
- W2005337151 hasConceptScore W2005337151C2775941552 @default.
- W2005337151 hasConceptScore W2005337151C2778024958 @default.
- W2005337151 hasConceptScore W2005337151C49040817 @default.
- W2005337151 hasConceptScore W2005337151C78519656 @default.
- W2005337151 hasConceptScore W2005337151C86803240 @default.
- W2005337151 hasConceptScore W2005337151C89423630 @default.
- W2005337151 hasIssue "5" @default.
- W2005337151 hasLocation W20053371511 @default.
- W2005337151 hasOpenAccess W2005337151 @default.
- W2005337151 hasPrimaryLocation W20053371511 @default.
- W2005337151 hasRelatedWork W2058676402 @default.
- W2005337151 hasRelatedWork W2059363835 @default.
- W2005337151 hasRelatedWork W2139871202 @default.
- W2005337151 hasRelatedWork W2292675962 @default.
- W2005337151 hasRelatedWork W2329285141 @default.
- W2005337151 hasRelatedWork W2399397734 @default.
- W2005337151 hasRelatedWork W2769410768 @default.
- W2005337151 hasRelatedWork W2902546961 @default.
- W2005337151 hasRelatedWork W4296250578 @default.
- W2005337151 hasRelatedWork W4313653414 @default.
- W2005337151 hasVolume "31" @default.
- W2005337151 isParatext "false" @default.
- W2005337151 isRetracted "false" @default.
- W2005337151 magId "2005337151" @default.
- W2005337151 workType "article" @default.