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• W2005363254 abstract "This article reviews the growth techniques and growth parameters for the formation of cubic boron nitride (c-BN) thin films. It is generally accepted that the impact of energetic ions or neutral atoms is crucial to achieve c-BN film growth. Furthermore, c-BN nucleation is only observed within certain thresholds for the deposition parameters, including the substrate temperature. However, the temperature threshold exists only for the nucleation and not for the growth of c-BN. We will show that three independent characterization methods are necessary for the non-ambiguous identification of the c-BN phase within BN films. The cylindrical thermal spike model developed to describe the formation of diamond-like phases by ion deposition can be used to explain the c-BN nucleation and growth. A short introduction and the basic ideas of this model will be given. Finally, possible tribological applications of c-BN films and the doping of c-BN films will be discussed." @default.
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• W2005363254 date "2000-09-01" @default.
• W2005363254 modified "2023-09-27" @default.
• W2005363254 title "Growth, doping and applications of cubic boron nitride thin films" @default.
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• W2005363254 doi "https://doi.org/10.1016/s0925-9635(00)00299-5" @default.
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