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• W2005365537 abstract "A crack-free c -plane AlGaN/GaN heterostructure was grown on a diamond (111) substrate by using an AlN/GaN multi-buffer layer. We found that in the AlGaN/GaN heterostructure, the GaN layer was coherently grown on the AlN/GaN multi-buffer layer. The a -lattice constant of strain-free GaN is longer than the average a -lattice constant of the AlN/GaN multi-buffer layer. Therefore, compressive strain is induced in the GaN layer of the AlGaN/GaN heterostructure. The compressive strain compensates for the tensile strain induced by the diamond substrate, which makes the AlGaN/GaN heterostructure free of cracks. AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on diamond substrates show the maximum drain current of 275 mA/mm, transconductance of 60 mS/mm, and clear pinch-off characteristics for a gate length of 6 µm. The low thermal resistance of the AlGaN/GaN HEMTs on the diamond is demonstrated." @default.
• W2005365537 created "2016-06-24" @default.
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• W2005365537 date "2012-01-01" @default.
• W2005365537 modified "2023-10-14" @default.
• W2005365537 title "Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate" @default.
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• W2005365537 doi "https://doi.org/10.1143/jjap.51.01ag09" @default.
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