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• W2005388612 abstract "X-ray diffraction, scanning electron microscopy, compositional analysis and transmission measurements are performed on InSe thin films grown by thermal evaporation at different substrate and annealing temperatures of 150–250°C and 100–200°C, respectively. An analysis of structural measurements indicates that there exist three phases of In–Se system like InSe, In2Se3 and In6Se7 in the same film at low-substrate temperature, but at high-substrate temperatures, In2Se3 phase was absent. The composition of InSe films changed significantly with substrate temperature and slightly with annealing temperature because of re-evaporation of selenium. The transmission measurements were carried out at room temperature over the spectral range 0.5 to 2.5 μm. As a result of optical energy gap studies, the direct energy band gap was found to be in between 1.21 and 1.38 eV depending on substrate and annealing temperatures." @default.
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• W2005388612 date "1998-06-01" @default.
• W2005388612 modified "2023-09-26" @default.
• W2005388612 title "The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films" @default.
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• W2005388612 doi "https://doi.org/10.1016/s0040-6090(97)00929-2" @default.
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