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- W2005402012 abstract "An envelope function framework was used to calculate the conduction band structure of AlN/GaN quantum wells for application to quantum cascade lasers. We took into account the piezo- and spontaneous polarization fields in the nitride quantum wells. The design of the quantum cascade structures in the AlN/GaN system becomes much simpler if we utilize the effect of polarization fields. [(AlN) 1 /(GaN) n 1 ] m /(AlN) n 2 quantum wells were prepared using hot-wall epitaxy for mid-infrared quantum cascade laser applications, and X-ray diffraction and transmission electron microscopy (TEM) measurements were performed on them. The X-ray diffraction measurements of the quantum wells were in good agreement with the theoretical pattern, and the coherent growth of quantum wells on the GaN buffer layers was ascertained by X-ray reciprocal mapping. The existence of a single atomic layer of AlN was observed by TEM measurements." @default.
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- W2005402012 date "2005-08-01" @default.
- W2005402012 modified "2023-10-16" @default.
- W2005402012 title "Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications" @default.
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- W2005402012 doi "https://doi.org/10.1143/jjap.44.5918" @default.
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