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• W2005418270 abstract "C60 films up to 1000 Å in thickness have been grown by room-temperature sublimation onto Si(100) and Si(111) substrates that have been prepared with surfaces passivated against dangling bonds. X-ray diffraction measurements reveal that films deposited on such substrates have a high degree of (111)-textured crystallinity which is absent in films deposited on untreated Si. Examination of surface topographies with tapping mode atomic force microscopy shows a thickness-dependent increase in roughness which is greater for the treated samples. Our results are placed in context with respect to what is presently known about the growth of C60 films on a variety of substrates. Implications for possible device applications will also be discussed." @default.
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• W2005418270 date "1995-03-01" @default.
• W2005418270 modified "2023-10-12" @default.
• W2005418270 title "C60 films on surface-treated silicon: recipes for amorphous and crystalline growth" @default.
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• W2005418270 doi "https://doi.org/10.1016/0040-6090(94)05701-x" @default.
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