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- W2005454909 abstract "In this work, using Si interface passivation layer (IPL) we present the electrical characteristics of TaN/HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /GaAs both p-and n-MOSFET made on GaAs substrates with excellent electrical and reliability characteristics, thin EOT (~2.3-3.0nm), low frequency dispersion (< 5%) and high maximum mobility (1213 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V-s) with high temperature PMA for n-MOSFET on undoped GaAs. Good inversion behavior with low D <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> on lightly doped p-type GaAs has been obtained. P-channel GaAs high-k MOSFETs with excellent peak mobility have also been demonstrated" @default.
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- W2005454909 date "2006-01-01" @default.
- W2005454909 modified "2023-09-29" @default.
- W2005454909 title "Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer" @default.
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- W2005454909 doi "https://doi.org/10.1109/iedm.2006.346742" @default.
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