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• W2005469673 abstract "We have studied the influence of atomic hydrogen (H) on the nucleation and growth of Ge films on Si(1 1 1) surfaces grown by molecular beam epitaxy (MBE) using scanning tunneling microscopy (STM). The substrate temperature dependence of two-dimensional (2D) nucleus density has two different activation energies, which depend on the surface structure change by H irradiation. In addition, the 2D nucleus density is proportional to the square root of the amount of atomic H flux density. We have discussed and proposed a model on the influence of H adsorption on the surface migration of Ge atoms. Moreover, the activation energy of nucleation is also increased by the H atoms, which arises from the addition of the activation energy of H desorption, indicated by a simple migration model. The model can also explain the H-flux dependence of the nucleus density." @default.
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• W2005469673 date "1998-06-01" @default.
• W2005469673 modified "2023-10-18" @default.
• W2005469673 title "Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy" @default.
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• W2005469673 doi "https://doi.org/10.1016/s0022-0248(98)00041-4" @default.
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