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- W2005472128 abstract "The formation of a transition metal-rich, glassy Si layer, followed by nucleation of a metallic suicide has been postulated to account for Schottky barrier behavior, and observed through transport and transmission electron-diffraction (TED) measurement. We report here the results of a multiple-angle-of-incidence ellipsometry study of the Co/Si interface for varying Co deposit thickness. As the Co deposit thickness is increased, initially a layer forms at the surface of the Si, which has the increased refractive index and extinction coefficient (at 6328 Å) characteristic of amorphous and ion-implanted Si. For deposit thicknesses larger than ~70 Å, the refractive index drops sharply to values below that for the bulk Si, while absorption continues to increase. This transition thickness agrees quantitatively with the value at which the semiconducting-to-metallic transition has been observed in transport measurements, and the optical constants obtained here are believed to be characteristic of that transition." @default.
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- W2005472128 date "1980-06-01" @default.
- W2005472128 modified "2023-09-27" @default.
- W2005472128 title "Ellipsometric characterization of the glassy layer at metal/semiconductor interfaces" @default.
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- W2005472128 doi "https://doi.org/10.1016/0039-6028(80)90312-x" @default.
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