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- W2005487687 abstract "We have theoretically studied two types of two-dimensional electron gases (2DEGs) in GaAs/InGaAs/AlGaAs and δ-doped-AlGaAs/GaAs heterostructures for single-electron transistor applications by self-consistently solving the Schrödinger and Poisson equations. Assuming the dominant effect of the ionized impurity scattering in determining the low-field carrier mobility, it has been shown that introducing an InGaAs layer to the conventional GaAs/AlGaAs heterostructure greatly increases the sheet density of the 2DEG and the corresponding carrier mobility. The δ-doped AlGaAs/GaAs and AlGaAs/InGaAs/GaAs heterostructures provide us with an even better control of the 2DEG with higher sheet density and carrier mobility." @default.
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- W2005487687 date "2001-02-01" @default.
- W2005487687 modified "2023-10-16" @default.
- W2005487687 title "Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, δ-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application" @default.
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- W2005487687 doi "https://doi.org/10.1063/1.1328787" @default.
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