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- W2005502477 endingPage "582" @default.
- W2005502477 startingPage "577" @default.
- W2005502477 abstract "The neuron-MOS (neu-MOS) transistor, recently discovered by Shibata and Ohmi in 1991 [T. Shibata, T. Ohmi, International Electron Devices Meeting, Technical Digest, 1991] uses capacitively coupled inputs onto a floating gate. Neu-MOS enables the design of conventional analog and digital integrated circuits with a significant reduction in transistor count [L.S.Y. Wong, C.Y. Kwok, G.A. Rigby, in: Proceedings of the 1997 IEEE Custom Integrated Circuits Conference, 1997; B. Gonzales, D. Abbott, S.F. Al-Sarawi, A. Hernandez, J. Garcia, J. López, in: Proceedings of the XIII Design of Circuits and Integrated Systems Conference (DCIS'98), 1998, pp. 62–66]. Furthermore, neu-MOS circuit characteristics are relatively insensitive to transistor parameter variations inherent in all MOS fabrication processes. Neu-MOS circuit characteristics depend primarily on the floating gate coupling capacitor ratios. It is also thought that this enhancement in the functionality of the transistor, i.e. at the most elemental level in circuits, introduces a degree of flexibility that may lead to the realisation of intelligent functions at a system level [T. Ohmi, T. Shibata, in: Proceedings of the 20th International Conference on Microelectronics, vol. 1, 1995, pp. 11–18]. This paper extends the neu-MOS paradigm to complementary gallium arsenide based on HIGFET transistors. The design and HSPICE simulation results of a neu-GaAs ripple carry adder are presented, demonstrating the potential for very significant transistor count and area reduction through the use of neu-GaAs in VLSI design. Preliminary simulations indicate a reduction of a factor of four in transistor count for the same power dissipation as conventional complementary GaAs. The small gate leakage is shown to be useful in eliminating unwanted charge build-up on the floating gate." @default.
- W2005502477 created "2016-06-24" @default.
- W2005502477 creator A5040978000 @default.
- W2005502477 creator A5053660700 @default.
- W2005502477 creator A5080441562 @default.
- W2005502477 creator A5089728021 @default.
- W2005502477 date "2000-07-01" @default.
- W2005502477 modified "2023-09-25" @default.
- W2005502477 title "Novel extension of neu-MOS techniques to neu-GaAs" @default.
- W2005502477 cites W1491367177 @default.
- W2005502477 cites W1630413637 @default.
- W2005502477 cites W178586630 @default.
- W2005502477 cites W2023589172 @default.
- W2005502477 cites W2082506637 @default.
- W2005502477 doi "https://doi.org/10.1016/s0026-2692(00)00032-x" @default.
- W2005502477 hasPublicationYear "2000" @default.
- W2005502477 type Work @default.
- W2005502477 sameAs 2005502477 @default.
- W2005502477 citedByCount "1" @default.
- W2005502477 crossrefType "journal-article" @default.
- W2005502477 hasAuthorship W2005502477A5040978000 @default.
- W2005502477 hasAuthorship W2005502477A5053660700 @default.
- W2005502477 hasAuthorship W2005502477A5080441562 @default.
- W2005502477 hasAuthorship W2005502477A5089728021 @default.
- W2005502477 hasBestOaLocation W20055024772 @default.
- W2005502477 hasConcept C119599485 @default.
- W2005502477 hasConcept C127413603 @default.
- W2005502477 hasConcept C134146338 @default.
- W2005502477 hasConcept C14580979 @default.
- W2005502477 hasConcept C165801399 @default.
- W2005502477 hasConcept C172385210 @default.
- W2005502477 hasConcept C192562407 @default.
- W2005502477 hasConcept C196320899 @default.
- W2005502477 hasConcept C24326235 @default.
- W2005502477 hasConcept C41008148 @default.
- W2005502477 hasConcept C530198007 @default.
- W2005502477 hasConceptScore W2005502477C119599485 @default.
- W2005502477 hasConceptScore W2005502477C127413603 @default.
- W2005502477 hasConceptScore W2005502477C134146338 @default.
- W2005502477 hasConceptScore W2005502477C14580979 @default.
- W2005502477 hasConceptScore W2005502477C165801399 @default.
- W2005502477 hasConceptScore W2005502477C172385210 @default.
- W2005502477 hasConceptScore W2005502477C192562407 @default.
- W2005502477 hasConceptScore W2005502477C196320899 @default.
- W2005502477 hasConceptScore W2005502477C24326235 @default.
- W2005502477 hasConceptScore W2005502477C41008148 @default.
- W2005502477 hasConceptScore W2005502477C530198007 @default.
- W2005502477 hasIssue "7" @default.
- W2005502477 hasLocation W20055024771 @default.
- W2005502477 hasLocation W20055024772 @default.
- W2005502477 hasOpenAccess W2005502477 @default.
- W2005502477 hasPrimaryLocation W20055024771 @default.
- W2005502477 hasRelatedWork W1610298456 @default.
- W2005502477 hasRelatedWork W1909198667 @default.
- W2005502477 hasRelatedWork W1986914234 @default.
- W2005502477 hasRelatedWork W2135098054 @default.
- W2005502477 hasRelatedWork W2137494283 @default.
- W2005502477 hasRelatedWork W2154296321 @default.
- W2005502477 hasRelatedWork W2164771870 @default.
- W2005502477 hasRelatedWork W2189030243 @default.
- W2005502477 hasRelatedWork W2479079343 @default.
- W2005502477 hasRelatedWork W2899084033 @default.
- W2005502477 hasVolume "31" @default.
- W2005502477 isParatext "false" @default.
- W2005502477 isRetracted "false" @default.
- W2005502477 magId "2005502477" @default.
- W2005502477 workType "article" @default.