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- W2005512412 abstract "The rate of multiphonon capture with thermally activated temperature dependence is formulated with the semiclassical approximation for phonons. It bridges the nonadiabatic (weak-coupling) and the adiabatic (strong-coupling) limits when the interaction to induce capture is strengthened. Except in the nonadiabatic limit it is important that once-captured carriers can be reemitted into free states in a very short time (much shorter than an average phonon period) after capture. In the adiabatic limit, the preexponential factor ${ensuremath{sigma}}_{ensuremath{infty}}$ of the capture cross section, being proportional to ${T}^{ensuremath{-}2}$ at a temperature $T$, reaches a maximum of the order of ${10}^{ensuremath{-}14}$ ${mathrm{cm}}^{2}$, while that of the carrier-emission rate reaches a constant of the order of an average phonon frequency. Moreover, in this limit ${ensuremath{sigma}}_{ensuremath{infty}}$ does not include defect parameters any more and depends only on the effective mass of free carriers. These features of the adiabatic limit explain well Henry and Lang's observation that ${ensuremath{sigma}}_{ensuremath{infty}}$ being of the order of ${10}^{ensuremath{-}14}$-${10}^{ensuremath{-}15}$ ${mathrm{cm}}^{2}$ is apparently a universal quantity independent of defects within GaAs and GaP. The strength of the interaction is determined by the bandwidth of free carriers for defects with only one bound state, and a parameter distinguishing between the adiabatic and the nonadiabatic limits is given." @default.
- W2005512412 created "2016-06-24" @default.
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- W2005512412 date "1983-02-15" @default.
- W2005512412 modified "2023-10-12" @default.
- W2005512412 title "Nonradiative multiphonon capture of free carriers by deep-level defects in semiconductors: Adiabatic and nonadiabatic limits" @default.
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- W2005512412 doi "https://doi.org/10.1103/physrevb.27.2374" @default.
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