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- W2005590421 abstract "Beryllium doping levels of up to 2.25 x 1020 cm−3 in GaAs layers grown by molecular beam epitaxy (MBE) have been obtained under an As-rich condition. The heavily doped p-type layers have smooth surfaces and their root-mean-square roughness values do not significantly change as the hole concentration is increased. The mobility data show that the quality of the MBE layers is comparable with those prepared by liquid-phase epitaxy and vapour-phase epitaxy. Low-temperature (4 K) photoluminescence results demonstrate that the main emission line which is attributed to transitions involving Be acceptors on Ga sites shifts to a lower energy around 1.4628 eV as the hole concentration is increased to 2.25 x 1020 cm−3. This is probably due to an effective energy gap shrinkage at high doping levels." @default.
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- W2005590421 date "1993-11-01" @default.
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- W2005590421 title "Some characteristics of heavily Be-doped GaAs layers grown by molecular beam epitaxy" @default.
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- W2005590421 doi "https://doi.org/10.1016/0040-6090(93)90229-i" @default.
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