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- W2005593486 abstract "The Si c(4×4) structure formed on Si(0 0 1)-(2×1) surface using monomethylsilane (MMS) and dimethylsilane (DMS) was studied by reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). From the XPS measurement, it was found that SiC bonds existed in the Si c(4×4) surface layer. The crystal structure of surface layer, however, was not the one of cubic SiC (3C-SiC) crystal, because 3C-SiC spots were not observed on RHEED pattern. Therefore, Si1−xCx alloy layer would have been formed on the surface. From the angle-resolved XPS (AR-XPS) measurement, the thickness of the alloy layer was estimated to be 0.3 nm. From the AFM images of the Si surface after SiC nucleation, the Si c(4×4) layer is considered to play a role as buffer layer relaxing the lattice mismatch between Si and SiC." @default.
- W2005593486 created "2016-06-24" @default.
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- W2005593486 date "2003-05-01" @default.
- W2005593486 modified "2023-09-26" @default.
- W2005593486 title "Si c(4×4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane" @default.
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- W2005593486 doi "https://doi.org/10.1016/s0169-4332(03)00090-4" @default.
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