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- W2005652080 abstract "Effects of the N2O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer-dielectrics (ILDs) for sub-30 nm Si circuits. The spin-coated PHPS (18.5 wt.%) ILD layers converted at 650 °C were integrated with the 0.18 μm Si front-end-of-the line process. A modified contact pre-cleaning scheme using N2O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT." @default.
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- W2005652080 date "2014-01-01" @default.
- W2005652080 modified "2023-09-25" @default.
- W2005652080 title "Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications" @default.
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- W2005652080 doi "https://doi.org/10.1016/j.tsf.2013.11.104" @default.
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