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• W2005682435 abstract "We have made as-grown MgB2 film deposited by molecular beam epitaxy (MBE) under co-evaporation conditions of low temperature, low growth rate, and ultra high vacuum on three types of substrates, MgO(1 0 0), Al2O3(0 0 0 1), and SrTiO3(1 0 0). The optimization of these conditions was investigated with respect to (1) growth temperature (Ts < 250 °C), (2) B deposition rate, and (3) Mg/B deposition ratio. The film properties were investigated by RHEED, XRD, AFM, electrical resistivity, and SQUID magnetometer. The film grown at 200 °C, B deposition rate of 0.3 Å/s and Mg/B ratio of 8 showed the highest Tc, onset of 35 K and had a sharp transition (ΔTc = 0.5 K). We report the upper critical field and anisotropy ratio of these films." @default.
• W2005682435 created "2016-06-24" @default.
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• W2005682435 date "2005-10-01" @default.
• W2005682435 modified "2023-10-18" @default.
• W2005682435 title "Optimization of co-evaporation conditions of as-grown MgB2 thin films by molecular beam epitaxy" @default.
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• W2005682435 doi "https://doi.org/10.1016/j.physc.2005.02.154" @default.
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