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• W2005702335 abstract "The authors report the growth and characterization of a dilute nitride, InNAsSb∕InAs, by solid source molecular beam epitaxy. Optimizing growth conditions for nitrogen incorporation has resulted in high-quality InNAsSb epilayers without any structural degradation, as confirmed by high-resolution x-ray diffraction. Optical properties were investigated by temperature dependent and excitation power dependent photoluminescence. The authors obtained mid-infrared luminescence around 4μm at low temperature, which reveals strong carrier localization behavior at low temperature, induced by nitrogen and antimony interaction. The band alignment of InNAsSb∕InAs can be type I instead of the conventional type II found for InAsSb∕InAs. A conduction band offset, Ec, of ∼102meV was obtained." @default.
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• W2005702335 date "2006-09-18" @default.
• W2005702335 modified "2023-10-14" @default.
• W2005702335 title "Mid-infrared luminescence of an InNAsSb∕InAs single quantum well grown by molecular beam epitaxy" @default.
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• W2005702335 doi "https://doi.org/10.1063/1.2356102" @default.
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