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• W2005702955 abstract "Abstract SrBi2Ta2O9 (SBT) films have received considerable attention for use as nonvolatile memory elements. We have developed a process to prepare SBT films with good ferroelectric properties at low temperatures. In this paper, we will present strategies used to optimize the properties of the films including film composition, the nature of the substrate (or bottom electrode) used, and the thermal processing cycle. Under appropriate conditions, ∼1700A films can be prepared which have a large switchable polarization (2Psw >10μC/cm2), and an operating voltage ≤2.0V." @default.
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• W2005702955 date "1998-03-01" @default.
• W2005702955 modified "2023-09-24" @default.
• W2005702955 title "Chemical solution deposition of SrBi2Ta2O9 (SBT) films for non-volatile memory applications" @default.
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• W2005702955 doi "https://doi.org/10.1080/10584589808208028" @default.
• W2005702955 hasPublicationYear "1998" @default.
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