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- W2005793296 abstract "We report electrical transport and x-ray studies under high pressure of the filled skutterudite compound ${text{CeRu}}_{4}{text{Sb}}_{12}$. Electrical resistivity measurements in the temperature range 2--300 K and under hydrostatic pressures up to 10.0 GPa have revealed a pressure-induced metal-semiconductor transition above 5.0 GPa in ${text{CeRu}}_{4}{text{Sb}}_{12}$. The energy gap in the semiconducting state of ${text{CeRu}}_{4}{text{Sb}}_{12}$ estimated from an activation law increases with a pressure coefficient of $ensuremath{sim}12text{ }text{K}/text{GPa}$. On the other hand, a high-pressure x-ray study has determined the relationship between lattice constant and energy gap of ${text{CeRu}}_{4}{text{Sb}}_{12}$ under high pressure. We suggest that an electronic mechanism of a semiconducting state in ${text{CeRu}}_{4}{text{Sb}}_{12}$ under high pressure could originate from an enhanced $censuremath{-}f$ hybridization and that the $P$-induced state could be categorized as a Kondo semiconductor." @default.
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- W2005793296 date "2009-01-30" @default.
- W2005793296 modified "2023-10-01" @default.
- W2005793296 title "Pressure-induced Kondo semiconductor: The filled skutterudite compoundCeRu4Sb12" @default.
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- W2005793296 doi "https://doi.org/10.1103/physrevb.79.014441" @default.
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