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- W2005873191 abstract "This paper investigates indium antimonide based quantum well field effect transistors with 40 nm physical gate length. Self consistent T-CAD simulations are used to study the high-speed potential of InSb field-effect transistors and its suitable for high speed, very low power logic applications. At the room temperature electron mobility in excess of 30,000 cm2/V−1s−1 in material with sheet carrier density typical of that employed in analogue transistors. 40nm gate length is used to obtain maximum drain current of 6.4e-4A/μm and the threshold voltage of the device is found to be −0.5V. The maximum drain current is found to be 6.4e-4 for the doping concentration of 1e+19. The OFF current of the device is found to be 2.642e-07A/μm when the gate voltage increases beyond 0.2V." @default.
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- W2005873191 date "2014-03-01" @default.
- W2005873191 modified "2023-09-23" @default.
- W2005873191 title "Modelling and investigation of III-V compound semiconductor based HEMT's for high performance applications" @default.
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- W2005873191 doi "https://doi.org/10.1109/icdcsyst.2014.6926123" @default.
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