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- W2005874144 abstract "Multi-quantum well structures with 3C–SiC wells between α-SiC barriers were grown in a two-step procedure by solid-source molecular beam epitaxy. First, one-dimensional wire-like 3C–SiC was nucleated selectively on terraces of the well-prepared off-axis α-SiC(0 0 0 1) substrates at low temperature (T<1500K). Next, 3C–SiC lamellae were incorporated into the hexagonal layer material via simultaneous step-flow growth mode of both the 3C–SiC nuclei and the hexagonal substrate material at higher T and Si-rich conditions. In comparison to homopolytypic SiC layers, photoluminescence investigations revealed additional signals, which can be explained by optical transitions within the thin cubic well layers." @default.
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- W2005874144 date "2001-12-01" @default.
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- W2005874144 title "MBE growth and properties of SiC multi-quantum well structures" @default.
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- W2005874144 doi "https://doi.org/10.1016/s0169-4332(01)00473-1" @default.
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