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- W2005931499 abstract "The kinetic processes occurring during postexposure bake (PEB) were studied for different Shipley photoresists as a function of bake temperature with the aim of developing models to accurately simulate the observed temperature dependent responses. S7 193nm photoresist based on a high activation energy methacrylate platform and SL4000 248 nm photoresist based on a low activation energy acetal platform were investigated. Deprotection rate constants, K<SUB>amp</SUB>, were measured directly by IR spectroscopy. K<SUB>amp</SUB> was independent of PEB temperature for SL4000 and followed standard Arrhenius behavior for S7. Activation energies of deprotection determined from measurements of K<SUB>amp</SUB> were 13.4 and 0.82 kcal/mol for S7 and SL4000, respectively, and of the same order of magnitude as the corresponding pseudo- Arrhenius activation energies, 10.3 and 3.2 kcal/mol, respectively, determined from E<SUB>0</SUB> clearing doses as a matching experimental and simulated CDs of isolated lines as a function of PEB time and temperature. However, values of D could not be unambiguously determined because a finite bulk acid loss rate constant was required to accurately simulate the observed CD changes at high PEB temperature. The need for a blk acid loss rate constant at high bake temperatures suggests that the effects of base diffusion are significant under these conditions. CD changes in SL4000 were best simulated with a 1st order model, where the imaging chemistry occurs solely during the exposure step as in DNQ/Novolac photoresists." @default.
- W2005931499 created "2016-06-24" @default.
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- W2005931499 date "2002-07-15" @default.
- W2005931499 modified "2023-09-23" @default.
- W2005931499 title "Measuring and simulating postexposure bake temperature effects in chemically amplified photoresists" @default.
- W2005931499 doi "https://doi.org/10.1117/12.474171" @default.
- W2005931499 hasPublicationYear "2002" @default.
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